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The interdigitated contacts have 3 different gaps (8µm
The GFET-S12 chip from Graphenea provides 27 graphene devices distributed in a grid pattern on the chip
· Spin coated for high homogeneity
· Substrate thickness: 525 μm
Our monolayer graphene on PET (fully covered) is produced by CVD and transferred to a circular substrate of PET by a semi-dry transfer process
GFET-S22 for Sensing applications GFET The interdigitated contacts have 3GFET S22 (Die size 10 mm x 10 mm) Processed in Clean Room Class 1000 The GFET S 22 chip from Graphenea is designed for measurements in liquid medium. The new version provides 4 independent set of graphene devices, each set with 3 individual channels, with encapsulation on the metal pads to avoid degradation and reduce leakage currents; the probe pads are located near the periphery of the chip. It also includes a non encapsulated electrode at the